Effects of post-growth annealing in vacuum and Zn vapor on the electrical and optical properties of magnetron sputtered GaMgZnO films

The Ga 0.04 Mg 0.10 Zn 0.86 O films with high transmittance have been magnetron sputtered in Ar or O 2 plasma and post-growth annealed within vacuum and Zn vapor. It was observed that the optical band-gap and the film conductivity significantly increased after annealing in vacuum and Zn vapor. The resistivity and the optical bandgap of the ZnMgGaO film prepared in O 2 plasma changed from $2\times 10^{2}\ \Omega \mathrm{cm}$ and 3.34 eV to $1.3\times 10^{-3}\ \Omega \mathrm{cm}$ and 3.60 eV after annealed in Zn vapor and those for the films grown in Ar plasma from $2\times 10^{-2}\ \Omega \mathrm{cm}$ and 3.64 eV to $3.0\times 10^{-3}\ \Omega \mathrm{cm}$ and 3.72 eV. Results of further detailed investigation including results of XPS and XRD and discussions on the defect behavior of the samples during the treatments will be discussed during the presentation.