Conditions for experimental observation of the critical behavior of the longitudinal and Hall resistance in the quantum Hall regime in gallium and indium arsenide-based heterostructures

The longitudinal and Hall resistivity in the quantum Hall effect (QHE) regime for n-InGaAs/GaAs nanostructures with a single and double quantum wells was studied at B = (0–16) T and T = (0.05–4.2) K, before and after IR-illumination. The features of the critical behavior of the longitudinal and Hall conductance in the QHE plateau-to-plateau transition regions were studied to identify the conditions of experimental observation of the scaling regime. The temperature dependences of the width of QHE plateau-to-plateau transitions were analyzed based on the two-parameter scaling theory.