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25aXD-12 Cross sectional STM observation of dislocations and stacking faults in InAs/GaAs/InAs(111)A MBE growth crystal.
25aXD-12 Cross sectional STM observation of dislocations and stacking faults in InAs/GaAs/InAs(111)A MBE growth crystal.
2005
S. Teraoka
K. Ishizaki
K. Hitachi
H. Yamaguchi
S. Tarucha
Keywords:
Crystallography
Stacking
Dislocation
Materials science
Condensed matter physics
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