Ultrahigh-Density β-Ga2O3 ∕ N -doped β-Ga2O3 Schottky and p-n Nanowire Junctions: Synthesis and Electrical Transport Properties

We describe the fabrication of ultrahigh-density β-Ga 2 O 3 Schottky and N-doped β-Ga 2 O 3 /β-Ga 2 O 3 p-n nanowire junctions via microwave plasma enhanced chemical vapor deposition and thermal chemical vapor deposition. The electron transport mechanisms with Schottky and p-n nanowire junctions were characterized by current―voltage (I-V sd ) measurements. The I-V sd curve of different amount of the nanowires is greatly influenced by the potential barriers on the gap of Schottky nanowire junctions. N 2 plasma treatment led to rectifying electrical characteristics, suggesting that near surface was compensated by ion-induced deep-level states, which can be verified by cathodoluminescence spectrum. The current transport through p-n nanowire junctions is dominated by the deep-level-assisted tunneling mechanism for ―0.8 V < V sd < 0.6 V and by the space-charge limited conductive mechanism beyond 0.6 V. The detailed I-V sd characteristics of the p-n nanowire junctions have been investigated in the temperature range 323―373 K.