A monolithic V-band upconverter, using 0.2 mu m InGaAs/GaAs pseudomorphic HEMT technology

The authors present the design and performance of a complete monolithic upconverter macrocell using 0.2- mu m InGaAs/GaAs pseudomorphic high-electron-mobility-transistor (HEMT) technology. Individual components, including a 2-10-GHz IF amplifier, a V-band upconverting mixer, and a V-band amplifier are described. Both linear and nonlinear circuit simulations were performed during the design to predict the circuit performance. The individual circuit designs are outlined. The measured results demonstrated a conversion gain of 10 dB at V-band by injecting a 2-10-GHz IF frequency with a local-oscillator (LO) drive of 10 dBm at 54 GHz. >