A High Sensitivity Biosensor Based On Vertically Stacked Silicon Nanosheet-FET

In this paper, for the first time, a vertically stacked silicon nanosheet-FET (VS-NS-FET) based biosensor is proposed and studied by 3D TCAD simulations. Furthermore, a comparative sensitivity analysis with conventional nanowire (NW-FET) biosensor and vertically stacked nanowire (VS-NW-FET) biosensor is performed to evaluate the performance of the device. The results indicate that the variation of the VS-NS-FET biosensor in transfer characteristics for different target biomolecules (with different dielectric constants (at p = 0) and charge densities (at k = 5)) is pronounced. Moreover, the proposed VS-NS-FET biosensor is more sensitive than the other two biosensors due to the increase of the channel width and the stacked structure. This biosensor is a promising candidate for future CMOS-based sensor applications.