Submilliamp 1.3 /spl mu/m vertical-cavity surface-emitting lasers with threshold current density of <500A/cm/sup 2/

High performance 1.3 /spl mu/m vertical-cavity surface-emitting lasers (VCSELs) using oxygen implantation in wafer-bonded GaAs-AlGaAs mirrors are demonstrated. A record low threshold current density of 454 A/cm/sup 2/ and a threshold current of 0.83 mA have been achieved for pulsed operation at 20/spl deg/C. The maximum CW and pulsed operating temperatures are 40 and 112/spl deg/C, respectively.