Demonstration of distinct semiconducting transport characteristics of monolayer graphene functionalized via plasma activation of substrate surfaces

Abstract We report semiconducting behavior of monolayer graphene enabled through plasma activation of substrate surfaces. The graphene devices are fabricated by mechanical exfoliation onto pre-processed SiO 2 /Si substrates. Contrary to pristine graphene, these graphene samples exhibit a transport gap as well as nonlinear transfer characteristics, a large on/off ratio of 600 at cryogenic temperatures, and an insulating-like temperature dependence. Raman spectroscopic characterization shows evidence of sp 3 hybridization of C atoms in the samples of graphene on activated SiO 2 /Si substrates. We analyze the hopping transport at low temperatures, and weak localization observed from magnetotransport measurements, suggesting a correlation between carrier localization and the sp 3 -type defects in the functionalized graphene. The present study demonstrates the functionalization of graphene using a novel substrate surface-activation method for future graphene-based applications.