Modeling of hydrogenated amorphous silicon Schottky structures using capacitance‐voltage and conductance‐voltage measurements

The conduction process in a‐Si:H Schottky structures (metal‐I‐N+/substrate) is controlled primarily by the intrinsic (I) layer. This layer acts as a photoconductive insulator sandwiched between the bottom injecting contact and top blocking contact. A model incorporating this dual behavior of the I layer has been proposed to develop equations for the terminal dark current, capacitance (C), and conductance‐voltage (G‐V) characteristics of these structures. The results of dark C‐V and G‐V computations have been compared with the experimental data. The basic features of dark and illuminated G‐V and illuminated C‐V data have also been explained on the basis of this model.