High Electrical and Thermal Conductivity of Nano-Ag Paste for Power Electronic Applications

The nano-Ag paste consisted of Ag nanoparticles and organic solvents. These organics would be removed by evaporation or decomposition during sintering. When the sintering temperature was 300 °C, the resistivity of sintered bulk was 8.35 × 10−6 Ω cm, and its thermal conductivity was 247 W m−1 K−1. The Si/SiC chips and direct bonding copper (DBC) substrates could be bonded by this nano-Ag paste at low temperature. The bonding interface, sintered microstructure and shear strength of Si/SiC chip attachment were investigated by scanning electron microscopy, transmission electron microscopy and shear tests. Results showed that the sintered Ag layer was porous structure and tightly adhered to the electroless nickel immersion gold surface of DBC substrate and formed the continuous Ag–Au interdiffusion layer. The shear strength of Si and SiC chip attachments was higher than 35 MPa when the sintering pressure was 10 MPa. The fracture occurred inside the sintered Ag layer, and the fracture surface had obvious plastic deformation.