Stability of microdefects in poly-Si films grown by alpha -Si solid state crystallization

For poly-Si thin film transistors (TFTs) in order to improve the electrical characteristics of the poly-Si films a better understanding of the structure of the films and the related defects versus grain size is needed. In this contribution the structure and the stability of defects of the alpha -Si films which are formed by low temperature solid state crystallization and subsequent annealing is discussed. Amorphous silicon films were deposited on glass by the LPCVD and annealed at 610 degrees C for 8 h. Most of the crystallites exhibit a three dimensional ellipsoidal shape. The large axis of the ellipsoid coincides with the