Variation Study of the Planar Ground-Plane Bulk MOSFET, SOI FinFET, and Trigate Bulk MOSFET Designs

The impact of systematic and random variations on transistor performance is investigated for the trigate bulk MOSFET, the planar ground-plane bulk MOSFET, and SOI FinFET. The results indicate that the trigate bulk MOSFET design is least sensitive to process-induced variations and offers the best nominal performance, as compared with the planar ground-plane bulk MOSFET and SOI FinFET.