Variation Study of the Planar Ground-Plane Bulk MOSFET, SOI FinFET, and Trigate Bulk MOSFET Designs
2011
The impact of systematic and random variations on transistor performance is investigated for the trigate bulk MOSFET, the planar ground-plane bulk MOSFET, and SOI FinFET. The results indicate that the trigate bulk MOSFET design is least sensitive to process-induced variations and offers the best nominal performance, as compared with the planar ground-plane bulk MOSFET and SOI FinFET.
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