Subpicosecond base transit time observed in a hot-electron transistor (HET)
1985
It has been found that the transverse magnetic field drastically reduces the current gain of an AlGaAs/GaAs hot-electron transistor (HET) at 4.2 K. The result can be understood in terms of the cyclotron motion of hot electrons within the base layer (1000 A thick). Estimated subpicosecond base transit time confirms the quasiballistic transport of hot electrons across the base layer of the HET.
Keywords:
- Correction
- Source
- Cite
- Save
- Machine Reading By IdeaReader
2
References
31
Citations
NaN
KQI