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(411)A GaAs基板上にMBE成長したIn 0.18 Ga 0.82 As/Al 0.3 Ga 0.7 As自己形成量子ドット構造
(411)A GaAs基板上にMBE成長したIn 0.18 Ga 0.82 As/Al 0.3 Ga 0.7 As自己形成量子ドット構造
1998
kuriyama ryouhei
hayasi hideki
kitayama masaki
sinohara keisuke
simomura satosi
hiyamizu sa hisasi
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