Model and Transport in a Three-Layered Heterostructure with Thin Quantum Well in the Schottky Layer

In recent years, multilayered structures containing low-dimensional regions have received considerable attention due to the possibility of creation of devices with new properties. The system considered in our report is three-layered. It consists of one layer of narrow gap semiconductor GaAs of thickness 3–10 nm grown on AlAs support and followed by 10–50 nm of AlAs MBE layer covered by a metallic contact creating a Schottky barrier. The two-dimentional region appears in the narrow gap layer of small thickness. In this paper, we present the results of computer simulation. Exact solutions of the Schrodinger equation, specific capacitance and I-V characteristics are obtained and analyzed. Unlike the well investigated DH HEMT systems (Inoue et al., 1985), holes and electrons are not spatially separated, which allows light absorbtion and makes such a structure attractive for application in fast electrooptical modulators.