Observation and control of surface reaction during Si molecular layer growth

Abstract Molecular-layer epitaxy (MLE) of Si on a Si(1 0 0) substrate was successfully performed by applying a temperature modulation (TM) method and investigating the surface reaction by in situ mass spectroscopy. Si 2 H 6 was used as the source gas. In the growth cycle, Si 2 H 6 injection was synchronized with the substrate temperature. When Si 2 H 6 supply was sufficient, the growth thickness per cycle saturated at 0.4–0.5 A which corresponds to 0.3 monolayer. During the growth, the intensity of amu 2H 2 + was measured by in situ mass spectroscopy. The results suggest that submonolayer Si growth is attained by the self-limiting adsorption of Si–H compound (400°C) and desorption of hydrogen (550°C).