Recent developments in ohmic contacts for III-V compound semiconductors

1992 
Recent advances in the technology and understanding of ohmic contacts for a variety of III–V compound semiconductor material systems are reviewed. Special attention is focused on factors and critical issues involved in making low resistance and reliable ohmic contacts. The solid‐phase regrowth mechanisms of key metallization systems are described. In addition, special techniques to improve the ohmic contacts are discussed. Finally, the reliability issues of ohmic contacts are addressed.
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