Melt structural self-organization in the transition layer during crystal growth under microgravity conditions

A brief review is given of the results obtained and published in 2003–2007 on the study and simulation of Ge:Ga, Ge:Sb, GaSb:Te, and InP:S single crystal growth from stoichiometric and nonstoichiometric melts aboard Foton satellites. The promising use of microgravity conditions in research of structural self-organization processes (cluster formation) in the crystal-melt transition layer during solidification is shown and substantiated. A mathematical model of heat and mass transfer that takes into account the two-phase character of the medium in boundary layers near the interface is created for the first time as an independent tool for studying these processes. Prospects for the development of this new field of space material science are discussed.