Electron mobility in gate all around cylindrical silicon nanowires: A Monte Carlo study

Electron mobility in gated silicon nanowires is calculated using a Monte Carlo simulation that considers phonon and surface roughness scattering. Surface roughness scattering rates are calculated using Ando's model. The eigenenergies and eigenfunctions required for scattering rate calculation are determined by self-consistent solution of the Schrodinger and Poisson equations. The effects of size quantization and transverse electric field on electron mobility are presented and discussed.