Structural studies of ion beam synthesised SiGe/Si heterostructures for HBT applications

Abstract Si/Si 1− x Ge x /Si heterostructures which are potentially suitable for HBT fabrication have been synthesised by implanting Ge + ions into a Si(100) substrate upon which a Si overlayer was deposited, followed by Si + -induced post-amorphization and low temperature Solid Phase Epitaxial Growth. RBS and TEM investigations have shown that the Ge induced end-of-range (EOR) defects are annihilated during regrowth, as well as extended defects observed in some C + co-implanted samples, resulting in good crystalline structures.