Fabrication and characterization of microstructures created in thermally deposited arsenic trisulfide by multiphoton lithography

A detailed study of multiphoton lithography (MPL) in arsenic trisulfide ( As 2 S 3 ) films and the effects on nanoscale morphology, chemical networking, and the appearance of the resulting features by the chemical composition, deposition rate, etch processing, and inclusion of an antireflection (AR) layer of As 2 Se 3 between the substrate and the As 2 S 3 layer is reported. MPL was used to photo-pattern nanostructured arrays in single- and multilayer films. The variation in chemical composition for laser-exposed, UV-exposed, and unexposed films is correlated with the etch response, nanostructure formation, and deposition conditions. Reflection of the focused beam at the substrate back into the film produces standing wave interference that modulates the exposure with distance from the substrate and produces nanobead structures. The interference and the modulation can be controlled by the addition of an AR layer of As 2 Se 3 deposited between the substrate and the As 2 S 3 film. Relative to structures produced in a single-layer As 2 S 3 film having no AR layer, photo-patterning in the multilayer As 2 S 3 -on- As 2

Keywords:

• Arsenic triselenide
• Arsenic trisulfide
• Microstructure
• Analytical chemistry
• Nanostructure
• Substrate (chemistry)
• Microfabrication
• Physics
• Chalcogenide glass
• Multiphoton lithography
• Nanotechnology
• Etching
• Silicon

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