以化學氣相沉積法在矽(100)上成長高指向立方碳化矽之研究

Silicon carbide (SiC) is a promising material in the electronic device application due to its wide band gap, high breakdown voltage, high conductivity and high electron mobility. In this thesis, we have successfully grown highly oriented 3C-SiC thin films on Si(100) substrates by Radio Frequency Chemical Vapor Deposition system (RFCVD), utilizing the three-step growth method in a SiH4-C3H8-H2 mixed gas. The three-step growth consists of hydrogen cleaning, propane carburization and SiC growth. At first, H2 is introduced at 900℃ to remove native oxide. The temperature is then ramped up rapidly to 1250℃ to decompose C3H8. The C atoms cracked from C3H8 are deposited on Si(100) and then form a SiC buffer layer at the surface. At last, the temperature is ramped up to 1380℃ in a mixed gas of SiH4-C3H8-H2 for 3C-SiC growth. The as-grown 3C-SiC thin film is highly oriented, characterized by AES、AFM、SEM、TEM、XPS and XRD analyses.