Influence of Oxygen and Boron on Defect Production in Irradiated Silicon

Introduction rates of dominant defects have been determined for electron-irradiated, p-type silicon as a function of oxygen and boron concentration. Samples included those with oxygen content ranging from 8 × 10 15 to 7 × 10 17 cm −3 . Initial results are described for samples with measured carbon content varying from 2 × 10 15 to 6 × 10 16 cm −3 . Competing defect reactions involving the interstitial defects, B i and C i , and oxygen, boron, and carbon are observed. The identities of an electron trap (B i -O i ) and a hole trap (B i -B s ) have been clarified.