Thin Gate Oxide using a New RTO/-N Clusterable Reactor

We present recent results obtained in thin gate oxides. These oxides are grown in a new clusterable RTP-system for 200mm diameter wafers. The main innovations of the reactor are dealing with the chamber geometry, gas distribution, double pyrometry and dedicated circular lamp array in order to insure an optimized light flow onto the wafer. Analytical and electrical data are given according to several oxidant and nitridant ratios (O 2 , N 2 O), The influence of different process parameters such as temperature, reaction time, N-content are discussed.