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(Invited) GaN HEMT Fabrication in a 200mm Si Foundry Environment: The Time Has Come
(Invited) GaN HEMT Fabrication in a 200mm Si Foundry Environment: The Time Has Come
2014
J. R. LaRoche
K. Ip
M Breen
W. Hoke
Yu Cao
John P. Bettencourt
D. Guenther
G. Gebara
T. D. Kennedy
Brian D. Schultz
Oleg Laboutin
C. Fong
T. Trimble
Wayne Johnson
Thomas E. Kazior
Jonathan P. Comeau
Keywords:
Foundry
Fabrication
Electrical engineering
Telecommunications
High-electron-mobility transistor
Engineering
Engineering physics
Correction
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