Production of GexSi1−x, and SiC Films on Si Substrates Using Particle-Beam Technologies

The paper presents the results of preliminary experiments on the production of GexSi1-x/Si structures using deposition of a thin Ge film on a Si substrate, implantation of Si ions and rapid electron-beam annealing. The conditions under which monocrystalline layers form have been found. It is supposed that the large depth of Ge penetration into Si is due to enhanced diffusion of Ge conditioned by the high density of point defects in the doped Si. It has been established that high-dose implantation of C ions into Si and subsequent electron beam annealing result in the formation of a monocrystalline layer of the SiC phase in the case of pulsed (∼0.7 fus) heating and liquid-phase recrystallisation and a polycrystalline SiC layer in the case of prolonged annealing.