Transition from the type-II broken-gap heterojunction to the staggered one in the GaInAsSb/InAs(GaSb) system

Conditions for the transition from the staggered heterojunction to the type-II broken-gap one were considered for isolated Ga{sub 1-x}In{sub x}As{sub y}Sb{sub 1-y}/InAs(GaSb) heterostructures in relation to the quaternary alloy composition. Energy-band diagrams of such heterojunctions were estimated and energy band offsets {delta} at the heterointerface were determined. It was experimentally found that the type-II broken-gap heterojunction in the Ga{sub 1-x}In{sub x}As{sub y}Sb{sub 1-y}/p-InAs structure is observed in the entire range of composition parameters under study, 0.03 0.92, the contribution of electrons of the semimetal channel at the heterointerface to the total conductivity was observed, as well as the transition from the staggered heterojunction to the type-II broken-gap one.