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Effect of oxynitridation annealing on defect properties at SiO2/SiC MOS interface
Effect of oxynitridation annealing on defect properties at SiO2/SiC MOS interface
2015
Takeuchi Wakana
Yamamoto Kensaku
Sakashita Mitsuo
Kanemura Takashi
Nakatsuka Osamu
Zaima Shigeaki
Keywords:
Annealing (metallurgy)
Molecular physics
Materials science
Optoelectronics
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