High-current backside-illuminated InGaAs/InP p-i-n potodiode
2009
We proposed a high-current backside-illuminated InGaAs/InP p-i-n photodiode (PD) with a non-absorbing drift region, and demonstrated an RF power output of 29.0 dBm at 5 GHz, a 3-dB bandwidth of 7 GHz, and a third order intercept point of 31 dBm at 2 GHz using a 70-μm-diameter PD.
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