Modeling and simulation of surface generation-recombination in Schottky diodes

The properties of the metal-semiconductor interface, which plays a dominant role in the charge transport through Schottky structures, are still not understood satisfactorily. The extraction of parameters from the measured I-V characteristics based on the classical thermionic emission-diffusion theory usually fails, especially at lower temperatures. We present a new more complex physical model which includes also the effects of surface generation-recombination and tunneling of free carriers via surface deep traps. Then the correlation of simulation experimental I-V characteristic is obtained in a much wider range of applied voltages and temperatures.