50-Gbit/s AGC and modulator driver amplifier ICs based on InP/InGaAs HBT technology

K. Watanabe,M. Hashimoto,H. Kudo,Hiroyuki Uchiyama,Hiroshi Ohta,Kiyoshi Ouchi,Ryoji Takeyari

50-Gbit/s AGC and modulator driver amplifier ICs based on InP/InGaAs HBT technology

2003

K. Watanabe
M. Hashimoto
H. Kudo
Hiroyuki Uchiyama
Hiroshi Ohta
Kiyoshi Ouchi
Ryoji Takeyari

We demonstrated first 50-Gbit/s operation of AGC and modulator driver amplifier ICs based on InP/InGaAs heterojunction-bipolar-transistor (HBT) technology aimed for 40-Gbit/s optical transceivers equipped with over 20% forward error correction (FEC).

Keywords:

Amplifier
Heterojunction bipolar transistor
Physics
Gigabit
Electrical engineering
Automatic gain control
Transceiver
Forward error correction
Modulation
driver amplifier

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