GateTunnelingCur rentandQuantumEf fectsinDeepScale dMOSFETs

Models and simulations of gate tunneling current for thinoxide MOSFETs and Double-Gate SOIs are discussed. A guideline in design of leaky MOS capacitors is proposed and resonant gate tunneling current in DG SOI simulated based on quantum-mechanical models. Gate tunneling current in fullydepleted, double-gate SOI MOSFETs is characterized based on quantum-mechanical principles. The simulated IG‐VG of double-gate SOI has negative differential resistance like that of the resonant tunnel diodes.