Old Web
English
Sign In
Acemap
>
Paper
>
New process for low sheet and ohmic contact resistance of AIN/GaN MOS-HEMTs
New process for low sheet and ohmic contact resistance of AIN/GaN MOS-HEMTs
2010
taking
Khokhar
MacFarlane
Sharabi
Dabiran
Wasige
Keywords:
Gallium nitride
High-electron-mobility transistor
Optoelectronics
Ohmic contact
Thermal oxidation
Etching (microfabrication)
Wide-bandgap semiconductor
Gate dielectric
MOSFET
Materials science
Correction
Source
Cite
Save
Machine Reading By IdeaReader
0
References
7
Citations
NaN
KQI
[]