Monolithically integrated 1 TFT-1RRAM non-volatile memory cells fabricated on PI flexible substrate

This paper presents an integrated, 1-transistor 1-RRAM cell based on amorphous InGaZnO flexible thin-film transistor technology. Both elements of the memory cell have been integrated side-by-side in a monolithic fashion on a flexible polyimide substrate. The thin-film transistor technology shows good uniformity figures, with a minimal channel length of $5 \mu\mathrm{m}$ . The non-volatile memory technology is based on TaOx as material for Resistive Random Access Memory. The integrated alable memory device measures $5\mathrm{x}5 \ \mu \mathrm{m}^{2}$ and results in a memory window of 7.76.