High power and high efficiency GaN-HEMT for microwave communication applications

Microwaves have been widely used for the modern communication systems, which have advantages in high bit rate transmission and the easiness of compact circuit and antenna design. Gallium Nitride (GaN), featured with high breakdown and high saturation velocity, is one of the promising material for high power and high frequency devices, and a kW-class output power has already been achieved [1]. We have developed the high power and high efficiency GaN HEMTs [2–5], targeting the amplifier for the base transceiver station (BTS). This presentation summarizes our recent works, focusing on the developments for the efficiency boosting and the robustness in high power RF operation.