Mask and method for the preparation of

The mask manufacturing method thereof and to improve the channel part forming defect of the thin-film transistor is disclosed. The mask includes a transparent substrate, a light-shielding layer and the contone layer half. Light-shielding layer is a transparent substrate formed on the first electrode unit, the second electrode portions one from the portion the first electrode portion bent in a second direction perpendicular to the first direction and the first electrode portion other end extending in a first direction disposed between the source electrode pattern from the first portion including a third electrode bent in a second direction and a second electrode portion and the third electrode portion and includes a drain electrode portion pattern extending in the second direction. Half contone layer is formed on the transparent substrate coupled to the half tonbu and half tonbu corresponding to the sub-source electrode pattern portion and spaced apart from the drain electrode pattern portion protruding in a second direction from the end of the second electrode portion and the third electrode portion dummy half tone comprises parts. By forming a pile of halftone it may be a region corresponding to a half-tone negative end suppress excessive exposure caused by the close to the exposed portion. Accordingly, to form a photoresist pattern corresponding to the channel portion of the TFT with a uniform thickness, so it is possible to suppress over-etching the channel section. Halftone mask, a slit mask