Method for manufacturing nano wire and semiconductor device

The invention nanowire manufacturing method and relates to the manufacture of semiconductor devices method using the nanowires, and more particularly the pores Seed (Seed) a silicon particle precipitated silicon particles are deposited on the nano-template using a porous nano-template as to prepare a silicon nanowires through the epitaxial growth method, and to a method for producing a semiconductor device by using the nanowires. According to a characteristic aspect of the invention, and the present invention includes the steps of precipitating the silicon particles at the pore bottom formed in the porous templates to form a nano-porous nano-template on a silicon substrate; Characterized in that it comprises the step of in the pore epitaxially growing the silicon nanowires with the silicon substrate and the vertical. Nano-porous template, nanowires, selective epitaxial growth, a semiconductor