Solid source molecular beam epitaxy of low threshold 1.55 μm wavelength GaInAs/GaInAsP/InP semiconductor lasers

We report the growth and characterization of 1.55 μm wavelength GaInAsP based semiconductor lasers grown by solid source molecular beam epitaxy. Quaternary compositions were reproducible over time. Photoluminescence and x‐ray diffraction spectra indicate abrupt quantum well interfaces. Separate confinement heterostructure laser diodes with four quantum wells had threshold current densities as low as 580 A/cm2 and 275 A/cm2 for unstrained Ga0.47In0.53As and strained Ga0.27In0.73As0.8P0.2 wells, respectively. These results are as good as the best results reported for similar lasers grown by any growth technique.