Comparing the soft x-rays transport in Si and Ge-sandwich targets by measuring transmission flux

Mid-Z dopant in ablator is very important in point design targets. In this paper, we develop a method to evaluate the soft x-ray transport of doped material with one dimensional planar target. The targets are designed as sandwich, so that the mid-layer is heated by M band, shock and thermal wave. The transmission fluxes from heated targets are measured with band-pass x-ray diodes. The Si and Ge dopants are evaluated with this method. The experimental results show that 1–1.6 keV x-ray transmission flux through Si-sandwich is higher than that through Ge-sandwich all the time. Also, the comparison of opacities shows that the opacity of Si is lower than that of Ge in the range of 1–1.6 keV, which is consistent with the experimental results.