Crystal growth and characterization of In1.9As0.1Se3

Crystals of In 1.9 As 0.1 Se 3 were grown by chemical vapor transport with chlorine as the transport agent. The composition was determined by chemical, X-ray, and densitometric analyses. This phase is related to a high-temperature modification of In 2 Se 3 . In 1.9 As 0.1 Se 3 was found to be an n -type semiconductor with a band gap, determined from optical absorption data, of 1.4 eV. When used as an anode in liquid electrolyte photocells, this compound showed initial photo-currents in both acidic (HCl) and basic (NaOH) solutions. However, this compound was unstable as an operating photoelectrode.