Thin film transistor substrate and manufacturing method thereof

The invention provides a thin film transistor substrate and a manufacturing method thereof. The method comprises the steps that a gate electrode is formed on the substrate; a gate insulation layer is formed on the substrate to cover the gate electrode; a semiconductor layer is formed on the gate insulation layer; the semiconductor layer is converted into plasma to form an ohmic contact layer with the predetermined thickness; a metal layer is formed on the gate insulation layer to cover the ohmic contact layer; patterning is conducted on the metal layer and the ohmic contact layer to form a source electrode and a drain electrode and expose the area, between the source electrode and the drain electrode, of the semiconductor layer; a passivation layer is formed on the source electrode, the drain electrode and the exposed semiconductor layer; a contact hole used for exposing the drain electrode is formed in the passivation layer; a pixel electrode is formed on the passivation layer and connected to the drain electrode through the contact hole. According to the method for manufacturing the thin film transistor substrate, additional arrangement of an etching barrier layer between the thin film transistor substrate and the source electrode and the drain electrode is not needed, so that the production cost is reduced, and the manufacturing technology is simplified.