Thin and Continuous CVD Cu Seed Layer Deposition by Controlling Deposition Parameters on Ru and Ta Under-layers.

Thin and Continuous CVD Cu seed layer deposition by controlling deposition parameters on Ru and Ta under-layers. Hoon Kim, Yasuhiko Kojima*, Hiroshi Sato*, Naoki Yoshii*, Shigetoshi Hosaka*, and Yukihiro Shimogaki Department of Materials Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-Ku, Tokyo 113-8656, Japan * Technology Development Center, Tokyo Electron AT Limited, 650 Mitsuzawa, Hosaka-cho, Nirasaki-city, Yamanashi 407-0192, Japan