Lighting system, particularly for EUV lithography

An illumination system, in particular for EUV lithography with a projection objective for producing semiconductor elements for wavelengths 193 nm with a light source (1), having an object plane (12) with an exit pupil (15) and with a first optical element (5) provided with first raster elements (6) for generating light channels and with a second optical element (7) with second raster elements (8). Each light channel from one of the first raster elements (6) of the first optical element (5) is formed, a grid element (8) of the second optical element (7) is assigned. The grid elements (6) of the first optical element (5) and the second optical element (7) can be configured or arranged so that they to the object plane (12) produces a continuous beam path for each light channel from the light source (1). The first raster elements (6) of the first optical element (5) are angularly adjustable to change a tilt. The second raster elements (8) of the second optical element (7) can be adjusted individually and independently in the location and / or at an angle to by shifting and / or tilting the first and second grid elements (8) (a different assignment of the first raster elements to realize 6) of the first optical element (5) to said second raster elements (8) of the second optical element (7).