New results with semiconductor drift chambers for X-ray spectroscopy

Silicon drift detectors have been tested for X-ray Spectroscopy applications. By optimizing the detector-FET connection and using a very low leakage current detector manufacturing process, it has been possible to achieve a very good energy resolution. The resolution and leakage current have been studied as a function of temperature, from room temperature down to -30/spl deg/C, and as a function of active area. Also the effects influencing the peak to background ratio have been outlined. >