21.2: Highly Reliable Oxide Thin Film Transistor with Novel Oxide Passivation Layers By All‐Printing Processes

We have developed highly reliable oxide TFT arrays by allprinted maskless process from gate to passivation layers with 100 ppi RGB resolution. The threshold voltage shifts under positive and negative bias-temperature-stress at 50 °C after 105 seconds were less than 0.8 and 0.3 V, respectively.