Performance improvements in all-solution processed inverted QLEDs realized by inserting an electron blocking layer.

Highly efficient, all-solution processed inverted quantum dot light-emitting diodes (QLEDs) are demonstrated by employing 1,3,5-tri(m-pyrid-3-yl-phenyl)benzene (TmPyPB) layer as electron blocking layer (EBL). Electron injection from ZnO electron transport layer to quantum dots (QDs) emission layer (EML) can be adjusted by thickness of TmPyPB layer, enabling the balanced charge carriers in QDs EML. With optimal thickness of this TmPyPB adjuster, 59.7% increment in the device current efficiency (from 8.2 cd/A to 13.1 cd/A) and 46.2% improvement in the maximum luminance (from 31916 cd/m2 to 46674 cd/m2) are achieved, compared with those of the control QLED which has double hole transport layer (HTL) structure. On the other hand, we find luminescence quenching process, which often happens at the interface of ZnO nanoparticles and QDs, is not obvious in our QLEDs, in which the ZnO layer is fabricated in precursor method, and this conclusion is verified through Time Resolution Photoluminescence (TRPL) test. In a word, this strategy provides a direction for optimizing charge carrier balance in all-solution processed inverted QLED.