Hf1-xZrxO2based bipolar selector with high uniformity and high selectivity for large-scale integration of memristor crossbars

The sneak path problem is a main limitation that affects the scale of the memristor crossbar array and hence its practical applications in memory and computing. Here, a bipolar, highly nonlinear selector based on $\text{Hf}_{1-\mathrm{x}}\text{Zr}_{\mathrm{x}}\mathrm{O}_{2}$ (HZO) was fabricated, which exhibits remarkable performance, including high selectivity of >106, robust endurance of >107, off-state current of ~pA and excellent uniformity, making it attractive for future high-density memristor crossbar arrays.