A Si tunnel field-effect transistor model with a high switching current ratio and steep sub-threshold swing

A novel double-gate tunneling field effect transistor (PNIN-P TFET) device structure, in which two pockets were inserted near the source side at the source-channel junction and placed in the middle of the additional underlap region between the channel and drain, respectively, is proposed to improve the performance of the tunneling field effect transistor (TFET). The device was found to possess the advantages of the source-pocket TFET (PNIN TFET) and the tunnel-induced injection field-effect transistor (TI-FET) simultaneously. A steep subthreshold swing (∼35 mV dec−1) and an excellent switching state current ratio (∼1012) were obtained at room temperature, indicating that this device is a promising candidate as a replacement for the traditional MOSFETs.