Possible phonon-induced electronic bi-stability in VO2 for ultrafast memory at room temperature

VO 2 is a model material system which exhibits a metal to insulator transition at T = 67°C thus holds potential for future ultrafast storage. There is a controversy on whether the IMT in VO 2 is purely electronic, or is driven by lattice distortions. However, the purely electronic process is more meaningful in ultrafast switching. We found a new electron-phonon pathway for a purely reversible electronic transition in a true bi-stable fashion under specific conditions. This finding will prompt the design of future ultrafast electro-resistive non-volatile memory devices.