The memory device and a semiconductor device

One object of power consumption can be suppressed to provide a memory device and a semiconductor device including the memory device. The memory device each memory cell transistor is used as a switching element functions as a memory element from the accumulation of charge retention, there is provided an oxide semiconductor film as an active layer of a transistor included. A transistor used as a memory element having a first gate electrode, the second gate electrode, a semiconductor film between the gate electrode of the first electrode and the second gate is located, a first insulating film positioned between the first gate electrode and the semiconductor film, located a source electrode of the second gate insulating film between the second electrode and the semiconductor film, and contact with the semiconductor film and the drain electrode.